NTMFS5C612NLT1G Trench6 N-Channel MV MOSFETs
onsemi

NTMFS5C612NLT1G Trench6 N-Channel MV MOSFETs

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onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

The onsemi Trench6 N-Channel MV MOSFETs are offered in a wide range of small-footprint package options for design flexibility.

FEATURES

  • AEC-Q101 qualified and PPAP capable options available
  • Small packages for compact designs
  • Ultra-Low RDS(ON) to reduce conduction losses
  • Optimized gate charge to reduce switching losses
  • High power density
  • Excellent thermal conduction
  • Improved efficiency
  • Halogen-free, Pb-free, and RoHS compliant

APPLICATIONS

  • ORing
  • Motor drive
  • DC-DC converters
  • Power load switches
  • Battery management
  • High-end computing

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